L2SA812SLT1G

L2SA812SLT1G PNP三极管 -60V -150mA/-0.15A 180MHz 270~560 -300mV/-0.3V SOT-23/SC-59 marking/标记 M7 高电压

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -60V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −50V 集电极连续输出电流ICCollector CurrentIC| −150mA/-0.15A 截止频率fTTranstion FrequencyfT| 180MHz 直流电流增益hFEDC Current GainhFE| 270~560 管压降VCE（sat）Collector-Emitter SaturationVoltage| -300mV/-0.3V 耗散功率PcPoWer Dissipation| 200mW/0.2W Description & Applications| PNP epitaxial planar transistor General Purpose Transistors FEATURES High Voltage NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements 描述与应用| PNP外延平面晶体管 通用晶体管 特点 高电压 NPN补充：L2SC1623  我们声明，对产品材料遵守RoHS要求