LTC4449EDCB#PBF

LINEAR TECHNOLOGY  LTC4449EDCB#PBF  驱动器芯片, MOSFET, 高压侧和低压侧, 4V-6.5V电源, 3.2A输出, 13ns延迟, DFN-8

The is a high frequency Gate Driver that is designed to drive two N-Channel MOSFETs in a synchronous DC/DC converter. The powerful rail-to-rail driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4449 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4449 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which functions at up to 42V above ground. The LTC4449 contains under-voltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an under-voltage condition is present. An adaptive shoot-through protection feature is also built-in to prevent the power loss resulting from MOSFET cross-conduction current.

.

Adaptive shoot-through protection

.

Under-voltage lockout

.

Rail-to-rail output drivers

.

Separate supply to match PWM controller

.

Drives dual N-channel MOSFET

.

3.2A Peak pull-up current

.

4.5A Peak pull-down current

.

8ns TG Rise time driving 3000pF load

.

7ns TG Fall time driving 3000pF load