CMPTA14

CMPTA14 NPN 500mA/0.5A 30V SOT-23/SC-59 markign/标记C1N 开关 功率放大

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 30V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-EmitterVoltageVCEO| 30V 集电极连续输出电流ICCollector CurrentIC| 500mA/0.5A 截止频率fTTranstion FrequencyfT| 125MHz 直流电流增益hFEDC Current GainhFE| 20000 @ 5V,0.1A 管压降VCE（sat）Collector-Emitter SaturationVoltage| 1.5V 耗散功率PcPower Dissipation| 350mW/0.35W Description & Applications| • The CENTRAL SEMICONDUCTOR CMPTA13,CMPTA63 series types are complementary • silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. 描述与应用| •中央SEMICONDUCTOR CMPTA13，CMPTA63系列类型是互补的 •硅达林顿由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，设计要求非常高增益的应用。