UF28100M

射频MOSFET功率晶体管， lOOW ， 28V 100 - 500兆赫 RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

RF Power MOSFET Transistor

100W, 100-500 MHz, 28V

Features

•  N-channel enhancement mode device

•  DMOS structure

•  Lower capacitances for broadband operation

•  High saturated output power

•  Lower noise figure than competitive devices

•  RoHS Compliant

贸泽:
RF MOSFET Transistors

Verical:
Trans RF MOSFET N-CH 65V 12A 5-Pin