DE275-501N16A
IXYS RF DE275-501N16A 晶体管, 射频FET, 500 V, 16 A, 590 W, 100 MHz, DE-275
The is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS on ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.
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- High isolation voltage
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- Excellent thermal transfer
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- Increased temperature and power cycling capability
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- IXYS advanced low Qg process
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- Low gate charge and capacitances offer easier to drive and faster switching
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- Very low insertion inductance
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- No beryllium oxide BeO or other hazardous materials
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- Easy to mount, no insulators needed
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- High power density