IRFP064VPBF

Trans MOSFET N-CH 60V 130A 3Pin3+Tab TO-247AC

VDSS= 60V

RDSon= 5.5mΩ

ID= 130A

Description

Advanced HEXFET® Power MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Optimized for SMPS Applications

Lead-Free