IPD65R225C7ATMA1
INFINEON IPD65R225C7ATMA1 功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
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- Increased dV/dt ruggedness
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- Better efficiency due to best in class FOM RDS ON x Eoss and RDS ON x Qg
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- Best in class RDS ON
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- Easy to use/drive
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- Halogen-free
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- Enabling higher system efficiency
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- Enabling higher frequency
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- Increased power density solutions
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- Size savings due to reduced cooling requirements
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- Higher system reliability due to lower operating temperatures
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- Reduced energy stored in output capacitanceEoss
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- Low switching losses
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- Outstanding CoolMOS™ quality
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.