TMS28F400BZT
262 144 x 16 位和 524 288 x 8 位引导块闪存
The TMS28F400BZx is a 524288 by 8-bit/262144 by 16-bit 4194304-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F400BZx is organized in a blocked architecture consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and three 128K-byte main blocks. The device can be ordered with either a top or bottom boot-block configuration. Operation as a 512K-byte 8-bit or a 256K-word 16-bit organization is user-definable.
Embedded program and block-erase functions are fully automated by an on-chip write state machine WSM, simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by the on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.
The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges:
0°C to 70°C and - 40°C to 85°C.
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- Organization... 524288 by 8 Bits
262144 by 16 Bits
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- Array-Blocking Architecture
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- Two 8K-Byte Parameter Blocks
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- One 96K-Byte Main Block
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- Three 128K-Byte Main Blocks
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- One 16K-Byte Protected Boot Block
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- Top or Bottom Boot Locations
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- All Inputs/Outputs TTL Compatible
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- Maximum Access/Minimum Cycle Time
VCC ± 10%
"28F400BZx80 80 ns
"28F400BZx90 90 ns
x = top T or bottom B boot-block configuration ordered
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- 10000 Program/Erase-Cycles
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- Two Temperature Ranges
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- Commercial...0°C to 70°C
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- Extended...- 40°C to 85°C
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- Low Power Dissipation VCC = 5.5 V
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- Active Write...330 mW Byte Write
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- Active Read...330 mW Byte Read
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- Active Write...358 mW Word Write
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- Active Read...330 mW Word Read
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- Block Erase...165 mW
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- Standby...0.55 mW CMOS-Input Levels
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- Deep Power-Down Mode...0.0066 mW
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- Fully Automated On-Chip Erase and Word/Byte-Program Operations
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- Write Protection for Boot Block
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- Industry Standard Command State Machine CSM
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- Erase Suspend/Resume
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- Algorithm-Selection Identifier