RN4984FE

RN4984FE NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA HEF=80 R1=R2=47KΩ 100mW/0.1W SOT-563/ES6 标记6D 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V/-50V 集电极连续输出电流IC Collector CurrentIC | 100mA/-100mA Q1基极输入电阻R1 Input ResistanceR1 | 47KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 47KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE | 80 截止频率fT Transtion FrequencyfT | 250MHz/200MHz 耗散功率Pc Power Dissipation | 100mW/0.1W Description & Applications | Features • TOSHIBA Transistor Silicon PNP

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NPN Epitaxial Type PCT Process Bias Resistor Built-in Transistor • Two devices are incorporated into an Extreme-Super-Mini 6-pin package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. 描述与应用 | 特点 • 硅PNP NPN外延型（PCT工艺）（偏置电阻晶体管） •两个设备都纳入一个极端超迷你（6针）封装。 •将偏置电阻晶体管，减少了部件数量。减少部件数量，能够制造更加紧凑的设备和降低装配成本。 应用 •开关，逆变电路，接口电路和驱动器电路应用。