MMBZ10VAL

NXP  MMBZ10VAL  静电保护装置, TVS, 14.2 V, TO-236AB, 3 引脚, 900 mV, 360 mW

General description

Unidirectional double ElectroStatic Discharge ESD protection diodes in a common

anode configuration, encapsulated in a SOT23 TO-236AB small Surface-Mounted

Device SMD plastic package. The devices are designed for ESD and transient

overvoltage protection of up to two signal lines.

Features

Unidirectional ESD protection of two lines

Bidirectional ESD protection of one line

Low diode capacitance: Cd≤280 pF

Rated peak pulse power: PPPM=40W

Ultra low leakage current: IRM=5nA

ESD protection up to 30 kV contac discharge

EC 61000-4-2; level 4 ESD

EC 61643-321

AEC-Q101 qualified

Applications

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Automotive electronic control units

Portable electronics