AAT7551IJS-T1

P沟道功率MOSFET概述AAT7551双低阈值20V，双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT7551是专为使用作为负载开关在电池组中电池供电的应用和保..

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -2.7A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.14Ω@ VGS = -2.5V, ID = -2.0A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.6V 耗散功率PdPower Dissipation| 1.2W Description & Applications| P-Channel Power MOSFET General Description The AAT7551 is dual low threshold 20V, dual P-Channel MOSFET is a member of "s TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7551 is designed for use as a load switch in battery powered applications and protection in battery packs. Applications • Battery Packs • Battery-powered portable equipment • Cellular and Cordless Telephones 描述与应用| P沟道功率MOSFET 概述 AAT7551双低阈值20V，双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT7551是专为使用作为负载开关 在电池组中电池供电的应用和保护。 应用 •电池组 •电池供电的便携式设备 •蜂窝和无绳电话