BSZ520N15NS3GATMA1

INFINEON  BSZ520N15NS3GATMA1  晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ520N15NS3GATMA1, 21 A, Vds=150 V, 8引脚 TSDSON封装

得捷:
MOSFET N-CH 150V 21A 8TSDSON

立创商城:
N沟道 150V 21A

贸泽:
MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3

艾睿:
Compared to traditional transistors, BSZ520N15NS3GATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 57000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 150V 21A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ520N15NS3GATMA1  MOSFET Transistor, N Channel, 21 A, 150 V, 0.042 ohm, 10 V, 3 V