SUD50P04-08-GE3

VISHAY  SUD50P04-08-GE3  晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V

The from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications.

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Drain to source voltage Vds of -40V

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Gate to source voltage of ±20V

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Continuous drain current Id of -50A

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Power dissipation Pd of 73.5W

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Low on state resistance of 9.7mohm at Vgs -4.5V

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Operating junction temperature range from -55°C to 150°C