JANS2N5339U3

TO-276AA NPN 100V 5A

FEATURES: ? PNP MEDIUM POWER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/561

贸泽:
Bipolar Transistors - BJT Power BJT

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANS2N5339U3 GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

Verical:
Trans GP BJT NPN 100V 5A 1000mW 3-Pin TO-276AA Tray

Win Source:
TRANS NPN 100V 5A SMD5