IGB20N60H3ATMA1

单晶体管, IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-263, 3 引脚

Summary of Features:

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Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz

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Low switching losses for high efficiency

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Excellent V cesat behavior thanks to the famous TRENCHSTOP™ technology

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Fast switching behavior with low EMI emissions

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Optimized diode for target applications, meaning further improvement in switching losses

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Low gate resistor selection possible down to 5Ω whilst maintaining excellent switching behaviour

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Short circuit capability

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Offering T jmax of 175°C

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Packaged with and without freewheeling diode for increased design freedom

Benefits:

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Excellent cost/performance

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Low switching and conduction losses

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Very good EMI behavior

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A small gate resistor for reduced delay time and voltage overshoot

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Smaller die sizes -> smaller packages

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Best-in-class IGBT efficiency and EMI behavior