JANTX2N5682

Trans GP BJT NPN 120V 1A 3Pin TO-39

FEATURES: ? NPN POWER AMPLIFIER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/580

贸泽:
Bipolar Transistors - BJT Power BJT

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANTX2N5682 GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.