SGP15N120XKSA1

单晶体管, IGBT, NPT, 30 A, 3.1 V, 198 W, 1.2 kV, TO-220, 3 引脚

IGBT NPT 1200 V 30 A 198 W 通孔 PG-TO220-3

得捷:
IGBT 1200V 30A 198W TO220-3

e络盟:
单晶体管, IGBT, NPT, 30 A, 3.1 V, 198 W, 1.2 kV, TO-220, 3 引脚

艾睿:
This SGP15N120XKSA1 IGBT transistor from Infineon Technologies is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 198000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin3+Tab TO-220AB

Verical:
Trans IGBT Chip N-CH 1200V 30A 198000mW 3-Pin3+Tab TO-220AB Tube