IPB117N20NFDATMA1

INFINEON  IPB117N20NFDATMA1  晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0103 ohm, 10 V, 3 V 新

OptiMOS™ FD 功率 MOSFET

欧时:
Infineon OptiMOS FD 系列 Si N沟道 MOSFET IPB117N20NFDATMA1, 84 A, Vds=200 V, 3引脚 D2PAK TO-263封装

立创商城:
N沟道 200V 84A

得捷:
MOSFET N-CH 200V 84A TO263-3

e络盟:
功率场效应管, MOSFET, N沟道, 200 V, 84 A, 0.0103 ohm, TO-263 D2PAK, 表面安装

艾睿:
Create an effective common drain amplifier using this IPB117N20NFDATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos fd technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

安富利:
Trans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R

TME:
Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3

Verical:
Trans MOSFET N-CH 200V 84A 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB117N20NFDATMA1  MOSFET, N-CH, 200V, 84A, TO-263-3 New