IXXH60N65B4

Trans IGBT Chip N-CH 650V 145A 536000mW Automotive 3Pin3+Tab TO-247AD

The IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 455000 mW. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology. It is made in a single configuration.

得捷:
IGBT 650V 116A 455W TO247AD

艾睿:
The IXXH60N65B4 IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 455000 mW. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 650V 145A 536000mW 3-Pin3+Tab TO-247AD

DeviceMart:
IGBT 650V 116A 455W TO247AD