BFP843H6327XTSA1

晶体管 双极-射频, NPN, 2.6 V, 125 mW, 55 mA, 150 hFE

Summary of Features:

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Low noise broadband NPN RF transistor based on ´s reliable, high volume SiGe:C bipolar technology

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High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness

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Unique combination of high RF performance, robustness and ease of application circuit design

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Low noise figure: NFmin = 1.0 dB at 2.4 GHz and 1.2 dB at 5.5 GHz, 1.8 V, 8 mA

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High gain: |S21|2 = 21 dB at 2.4 GHz and 15.5 dB at 5.5 GHz, 1.8 V, 15 mA

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OIP3 = 23 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 20 mA

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Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V 2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor

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Low power consumption, ideal for mobile applications

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Easy to use Pb free RoHS compliant and halogen free industry standard package with visible leads

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Qualification report according to AEC-Q101 available

Target Applications:

As Low Noise Amplifier LNA in

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Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA

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Satellite navigation systems e.g. GPS, GLONASS, COMPASS... and satellite C-band LNB 1st and 2nd stage LNA

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Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz

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ISM bands up to 10 GHz

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Dedicated short range communication DSRC system: WLAN IEEE802.11p