OP233
OPTEK TECHNOLOGY OP233 红外发射器, 密闭, 18 °, TO-46, 100 mA, 2 V, 500 ns, 250 ns
The is a gallium aluminium arsenide GaAIAs Infrared Emitting Diode, mounted in a hermetic metal housing. The gallium aluminium arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. The device is lensed to provide a narrow beam angle 18° between half power points. The 890nm wavelength closely matches the spectral response of silicon phototransistors.
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- Focused and non-focused optical light pattern
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- Enhanced temperature range
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- Mechanically and spectrally matched to other OPTEK devices