BSC0911NDATMA1

INFINEON  BSC0911NDATMA1  双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V

MOSFET - 阵列 2 N 沟道（双）非对称型 25V 18A，30A 1W 表面贴装型 PG-TISON-8

欧时:
Infineon MOSFET BSC0911ND

得捷:
MOSFET 2N-CH 25V 18A/30A TISON8

立创商城:
双N沟道配对 25V 18A 30A

贸泽:
MOSFET N-Ch 25V 40A TISON-8

e络盟:
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 900 µohm, 10 V, 1.6 V

艾睿:
As an alternative to traditional transistors, the BSC0911NDATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R

Chip1Stop:
Trans MOSFET N-CH 25V 22A/36A 8-Pin TISON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8

Verical:
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON EP T/R

Win Source:
MOSFET 2N-CH 25V 18A/30A TISON-8