IPG20N06S2L50ATMA1

INFINEON  IPG20N06S2L50ATMA1  双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.039 ohm, 10 V, 1.6 V

MOSFET - 阵列 2 N-通道（双） 55V 20A 51W 表面贴装型 PG-TDSON-8-4

立创商城:
2个N沟道 55V 20A

得捷:
MOSFET 2N-CH 55V 20A 8TDSON

贸泽:
MOSFET N-CHANNEL_55/60V

艾睿:
Increase the current or voltage in your circuit with this IPG20N06S2L50ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 51000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP

Verical:
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  IPG20N06S2L50ATMA1  Dual MOSFET, Dual N Channel, 20 A, 55 V, 0.039 ohm, 10 V, 1.6 V

Win Source:
MOSFET 2N-CH 55V 20A TDSON-8-4