DE150-501N04A

IXYS RF  DE150-501N04A  晶体管, 射频FET, 500 V, 4.5 A, 200 W, 100 MHz, DE-150

The is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.

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Low Qg and Rg

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High dv/dt rating

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Nanosecond switching