RJH60D7DPK-00#T0

Trans IGBT Chip N-CH 600V 90A 300000mW 3Pin3+Tab TO-3P Tube

You won"t need to worry about any lagging in your circuit with this IGBT transistor from Renesas. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.