SI4850EY-T1-E3
VISHAY SI4850EY-T1-E3 晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
The is a TrenchFET® N-channel enhancement-mode Power MOSFET with reduced total dynamic gate charge Qg.
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- Fast switching
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- 175°C Maximum junction temperature
欧时:
### N 通道 MOSFET,60V 至 90V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
e络盟:
VISHAY SI4850EY-T1-E3 晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
艾睿:
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
富昌:
单 N 沟道 60 V 0.022 Ohms 表面贴装 功率 Mosfet - SOIC-8
Verical:
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
Newark:
# VISHAY SI4850EY-T1-E3 MOSFET Transistor, N Channel, 8.5 A, 60 V, 0.018 ohm, 4.5 V, 1 V
力源芯城:
60V,8.5A,N沟道MOSFET