IPB026N06NATMA1

INFINEON  IPB026N06NATMA1  晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V

OptiMOS™5 功率 MOSFET

得捷:
MOSFET N-CH 60V 25A/100A D2PAK

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB026N06NATMA1, 100 A, Vds=60 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 60V 100A D2PAK-2

艾睿:
Use Infineon Technologies&s; IPB026N06NATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R

Chip1Stop:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3

Verical:
Trans MOSFET N-CH 60V 100A 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB026N06NATMA1  MOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V