BC846PNH6327XTSA1

Infineon BC846PNH6327XTSA1, 双 NPN + PNP 晶体管, 100 mA, Vce=65 V, HFE:200, 250 MHz, 6引脚 SOT-363 SC-88封装

双 NPN/PNP ，

得捷:
TRANS NPN/PNP 65V 0.1A SOT363-6

欧时:
Infineon BC846PNH6327XTSA1, 双 NPN + PNP 晶体管, 100 mA, Vce=65 V, HFE:200, 250 MHz, 6引脚 SOT-363 SC-88封装

艾睿:
Compared to other transistors, the npn and PNP BC846PNH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN/PNP 65V 0.1A 6-Pin SOT-363 T/R

Chip1Stop:
Trans GP BJT NPN/PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R

Verical:
Trans GP BJT NPN/PNP 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R

Win Source:
TRANS NPN/PNP 65V 0.1A SOT363-6