SD57030-01

LdmoST 系列 N沟道 增强模式 场效应 射频 功率晶体管

Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 74000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.

得捷:
FET RF 65V 945MHZ M250

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 N-Ch 65 Volt 4 Amp

艾睿:
Amplifying and switching electronic signals in radio frequency environments is easy with this SD57030-01 RF amplifier from STMicroelectronics. Its maximum power dissipation is 74000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.

安富利:
Trans MOSFET N-CH 65V 4A 3-Pin Case M-250

Chip1Stop:
Trans RF MOSFET N-CH 65V 4A 3-Pin Case M-250

DeviceMart:
TRANSISTOR RF PWR LDMOST M250