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BZW50-33BRL

双向 33V 5000W

76V Clamp 789A 8/20µs Ipp Tvs Diode Through Hole R-6


得捷:
TVS DIODE 33VWM 76VC R6


立创商城:
双向 Vrwm:33V 5kW


艾睿:
Protect users and systems from overvoltage conditions by equipping your electronic equipment with STMicroelectronics&s; BZW50-33BRL TVS diode. Its maximum leakage current is 5 μA. This device&s;s maximum clamping voltage is 76 V and minimum breakdown voltage is 36.6 V. Its peak pulse power dissipation is 5000 W. Its test current is 1 mA. This TVS diode has a minimum operating temperature of -65 °C and a maximum of 175 °C. This component will be shipped in tape and reel packaging for effective mounting and safe delivery.


安富利:
Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 Ammo


Chip1Stop:
Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 Ammo


TME:
Diode: transil; 5kW; 36.6V; 85A; bidirectional; R6


儒卓力:
**TVS-DIODE BI 5KW 39V R6 **


BZW50-33BRL PDF数据文档
图片 型号 厂商 下载
BZW50-33BRL ST Microelectronics 意法半导体
BZW50-56 ST Microelectronics 意法半导体
BZW50-82B ST Microelectronics 意法半导体
BZW50-180RL ST Microelectronics 意法半导体
BZW50-180 ST Microelectronics 意法半导体
BZW50-22 ST Microelectronics 意法半导体
BZW50-18 ST Microelectronics 意法半导体
BZW50-15B ST Microelectronics 意法半导体
BZW50-68B ST Microelectronics 意法半导体
BZW50-33B ST Microelectronics 意法半导体
BZW50-15RL ST Microelectronics 意法半导体