SI4888DY-T1-E3

MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.0058Ω; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

艾睿:
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

Allied Electronics:
MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.0058Ohm; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55