B82422H1223K

EPCOS  B82422H1223K  表面贴装高频电感器, B82422H系列, 22 µH, ± 10%, 1210 [3225 公制], 21 MHz, 1 ohm

薄膜电容器

艾睿:
Inductor Power Chip Molded Wirewound 22uH 10% 2.52MHz 12Q-Factor Ferrite 330mA 1Ohm DCR 1210 Automotive T/R

Allied Electronics:
Inductor SMD high current 1210 22uH

Chip1Stop:
Inductor Power Chip Molded Wirewound 22uH 10% 2.52MHz 12Q-Factor Ferrite 330mA 1Ohm DCR 1210 Blister T/R

Verical:
Inductor Power Chip Molded Wirewound 22uH 10% 2.52MHz 12Q-Factor Ferrite 0.33A 1Ohm DCR 1210 Automotive T/R

Win Source:
22μH Unshielded Wirewound Inductor 330mA 1 Ohm Max 1210 3225 Metric