高速PT IGBT High Speed PT IGBT
Use the IGBT transistor from as an electronic switch. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 223000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | APT27GA90BD15 | Microsemi 美高森美 | |
 | APT20GF120BRDQ1G | Microsemi 美高森美 | |
 | APT200GN60JDQ4G | Microsemi 美高森美 | |
 | APT200GN60JG | Microsemi 美高森美 | |
 | APT20GN60BG | Microsemi 美高森美 | |
 | APT20GN60BDQ1G | Microsemi 美高森美 | |
 | APT20F50S | Microsemi 美高森美 | |
 | APT24F50B | Microsemi 美高森美 | |
 | APT20GT60BRG | Microsemi 美高森美 | |
 | APT25GR120B | Microsemi 美高森美 | |
 | APT23F60B | Microsemi 美高森美 |
