FDD306P

FAIRCHILD SEMICONDUCTOR  FDD306P  晶体管, MOSFET, P沟道, 6.7 A, -12 V, 90 mohm, -4.5 V, -500 mV

The is a 1.8V specified P-channel MOSFET uses "s advanced low voltage PowerTrench® process. It has been optimized for battery power management.

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability