FDD306P
FAIRCHILD SEMICONDUCTOR FDD306P 晶体管, MOSFET, P沟道, 6.7 A, -12 V, 90 mohm, -4.5 V, -500 mV
The is a 1.8V specified P-channel MOSFET uses "s advanced low voltage PowerTrench® process. It has been optimized for battery power management.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability