BFU710F,115

BFU710 系列 5.5 V 14 dB 增益 NPN 硅锗 射频 晶体管 - SOT-343F-4

BFU710F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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110 GHz fT silicon germanium technology * High maximum power gain 14 dB at 12 GHz * Low noise high gain microwave transistor * Noise figure NF = 1.45 dB at 12 GHz

得捷:
RF TRANS NPN 2.8V 43GHZ 4DFP

贸泽:
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

e络盟:
晶体管 双极-射频, NPN, 2.8 V, 43 GHz, 136 mW, 2 mA, 200 hFE

艾睿:
Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin3+Tab DFP T/R

Chip1Stop:
Trans GP BJT NPN 2.8V 0.01A 4-Pin3+Tab DFP T/R

Verical:
Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin3+Tab DFP T/R

RfMW:
Transistor

DeviceMart:
TRANSISTOR NPN SOT343F-4