BFR505T

BFR505T NPN三极管 20V 18mA 9Ghz 60~250 SOT-523 marking/标记 NO 低功耗放大器，振荡器

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 15V 集电极连续输出电流ICCollector CurrentIC| 18mA 截止频率fTTranstion FrequencyfT| 9Ghz 直流电流增益hFEDC Current GainhFE| 60~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 150mW/0.15W Description & Applications| NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 SC-75 package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment cellular phones, cordless phones and pagers up to 2 GHz. 描述与应用| NPN9 GHz的宽带BFR505T的 特点 •低电流消耗 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性 •SOT416（SC-75）封装。 应用 低功耗放大器，振荡器和 特别是在便携式射频混频器 通信设备（手机，无绳电话和寻呼机）高达2 GHz。