MICROFJ-60035-TSV-TR1

J-SERIES SIPM: 硅光电倍增传感器，J 系列 SiPM

"s J-Series low-light sensors feature a high PDE photon detection efficiency that is achieved using a high-volume, P-on-N silicon foundry process. The J-Series sensors incorporate major improvements in the transit time spread which results in a significant improvement in the timing performance of the sensor. J-Series sensors are available in different sizes 3 mm, 4 mm and 6 mm and use a TSV Through Silicon Via process to create a package with minimal deadspace, that is compatible with industry standard lead-free, reflow soldering processes.

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High-density microcells

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J-Series sensors feature ON Semiconductor"s unique "fast output" terminal

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Temperature stability of 21.5 mV/°C

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Exceptional breakdown voltage uniformity of ±250 mV

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Available in a reflow solder compatible TSV chip-scale package

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Ultra-low dark count rates of 50 kHz/mm2 typical

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Optimized for high-performance timing applications, such as ToF-PET

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Bias voltage of less than 30 V

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3 mm, 4 mm and 6 mm sensor sizes