STGD8NC60KDT4

STGD8NC60KD 系列 600 V 8 A 表面贴装 耐短路 IGBT - TO-252

IGBT - 表面贴装型 DPAK

得捷:
IGBT 600V 15A 62W DPAK

立创商城:
STGD8NC60KDT4

贸泽:
IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET

e络盟:
单晶体管, IGBT, 15 A, 2.2 V, 62 W, 600 V, TO-252 DPAK, 3 引脚

艾睿:
Don&s;t be afraid to step up the amps in your device when using this STGD8NC60KDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 600V 15A 3-Pin2+Tab DPAK T/R

Verical:
Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin2+Tab DPAK T/R

DeviceMart:
IGBT N-CH 8A 600V DPAK

Win Source:
IGBT 600V 15A 62W DPAK