FDW2508PB

FDW2508PB双P沟道-1.8V指定的PowerTrench MOSFET -12V ， -6A ， 18mohm FDW2508PB Dual P-Channel -1.8V Specified PowerTrench MOSFET -12V, -6A, 18mohm

General Description

This P-Channel –1.8V specified MOSFET uses Semiconductor’s advanced low voltage PowerTrench® . It has been optimized for battery power management applications.

Features

„Max rDSon= 18mΩat VGS= –4.5V, ID= –6A

„Max rDSon= 22mΩat VGS= –2.5V, ID= –5A

„Max rDSon= 30mΩat VGS= –1.8V, ID= –4A

„Low gate charge

„High performance trench technology for extremely low rDSon

„Low profile TSSOP-8 package

„RoHS compliant