IKQ75N120CH3

Transistor: IGBT; 1200V; 75A; 256W; TO247-3; Series: H3

Description:

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

Summary of Features:

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High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

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20% lower R thjh compared to TO-247 3 pin

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Extended collector-emitter pin creepage of 4.25 mm

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Extended clip creepage due to fully encapsulated front side of the package

Benefits:

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Higher system power density – I c increase keeping the same system thermal performance

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Lower thermal resistance R thjh and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247

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Higher reliability, extended lifetime of the device