FDMQ8205A

双路场效应管, MOSFET, 双路N和P通道

Description:

is configured with low rDSdual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205A GreenBridgeTM2 is compatible with IEEE802.3 at PoE standard by not compromising detection and classification.

 

## Features:

· Low Power Loss GreenBridgeTM Replaces Diode Bridge

· Self Driving Circuitry for MOSFETs

· Low rDS 100V Rated MOSFETs

· Maximizing Available Power and Voltage

· Eliminating Thermal Design Problems