IRF7317TR

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Fully Avalanche Rated