DP0150BLP4-7

TRANS NPN 50V 100mA DFN1006H4

Bipolar BJT Transistor NPN 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3

得捷:
TRANS NPN 50V 0.1A DFN1006H4

艾睿:
Design various electronic circuits with this versatile PNP DP0150BLP4-7 GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT PNP 50V 0.1A 3-Pin DFN-H4 T/R

Verical:
Trans GP BJT PNP 50V 0.1A Automotive 3-Pin DFN-H4 T/R

Win Source:
TRANS NPN 50V 0.1A DFN1006H4