IKW40N65ES5XKSA1

单晶体管, IGBT, 79 A, 1.35 V, 230 W, 650 V, TO-247, 3 引脚

Summary of Features:

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Very low V CEsat of 1.35V at 25°C, 20% lower than TRENCHSTOP™ 5 H5

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I Cn=four times nominal current 100°C T c

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Soft current fall characteristics with no tail current

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Symmetrical, low voltage overshoot

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Gate voltage under control no oscillation. No risk of unwanted turn-on of device and no need for gate clamping

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Maximum junction temperature T vj=175°C

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Qualified according to JEDEC standards

Benefits:

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V CEpeak clamping circuits not required

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Suitable for use with single turn-on / turn-off gate resistor

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No need for gate clamping components

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Gate drivers with Miller clamping not required

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Reduction in the EMI filtering needed

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Excellent for paralleling