TMS28F200AZB

131 072 x 16 位和 262 144 x 8 位自动选择引导块存储器

The TMS28F200Axy is a 262144 by 8-bit/131072 by-16 bit 2097152-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200Axy is organized in a blocked architecture consisting of:

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One 16K-byte protected boot block

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Two 8K-byte parameter blocks

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One 96K-byte main block

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One 128K-byte main block

The device can be ordered in five different voltage configurations see Table 1. Operation as a 256K-byte 8-bit or a 128K-word 16-bit organization is user-definable.

The TMS28F002Axy is offered in a 256K-byte organization only. The operation for this device is the same as the TMS28F200Axy and is offered in the same voltage configurations. TMS28F002Axy can be substituted for the byte-wide TMS28F200Axy, with the latter being the generic name for this device family.

Embedded program and block-erase functions are fully automated by the on-chip write-state machine WSM, thereby simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks. The device features user-selectable block-erasure.

The configurations are as follow:

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The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows alternative read and program/erase voltages. Memory reads can be performed using 3.3-V VCC for optimum power consumption or at 5-V VCC, for device performance. Erasing or programming the device can be accomplished with 5-V VPP, which eliminates having to use a 12-V source and/or in-system voltage converters. Alternatively, 12-V VPP operation exists for systems that already have a 12-V power supply, which provides faster programming and erasing times. These configurations are offered in two different temperature ranges: 0°C to 70°C and - 40°C to 85°C.

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The TMS28F002AEy and the TMS28F200AEy configurations offer the auto-select feature of the TMS28F200ASy with an extended VCC to a low 2.7-V to 3.6-V range 3-V nominal. Memory reads can be performed using a 3-V VCC, allowing for more efficient power consumption than the "ASy device.

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The TMS28F002AMy and TMS28F200AMy configurations offer a 3-V or 5-V memory read with a 12-V program and erase. These configurations are intended for low 3.3-V reads and the fast programming offered with the12-V VPP and 5-V VCC. These configurations are offered in two different temperature ranges: 0°C to 70°C and - 40°C to 85°C.

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The TMS28F002AFy and TMS28F200AFy configurations offer a 5-V memory read with a 5-V or 12-V program and erase. These configurations are intended for systems using a single 5-V power supply. The configurations are offered in three temperature ranges: 0°C to 70°C, - 40°C to 85°C, and - 40°C to 125°C.

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The TMS28F002AZy and TMS28F200AZy configurations offer a 5-V memory read with a 12-V program and a 12-V erase for fast programming and erasing times. These configurations are offered in three temperature ranges: 0°C to 70°C,- 40°C to 85°C, and - 40°C to 125°C.

All configurations of the TMS28F200Axy are offered in the 44-pin plastic small-outline package PSOP and the 48-pin thin small-outline package TSOP. The TMS28F002Axy is offered in a 40-pin TSOP only. Both the 40-pin and 48-pin TSOP are offered for the 0°C to 70°C and - 40°C to 85°C temperature ranges only.

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Organization... 262144 by 8 bits

131072 by 16 bits

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Array-Blocking Architecture

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One 16K-Byte Protected Boot Block

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Two 8K-Byte Parameter Blocks

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One 96K-Byte Main Block

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One 128K-Byte Main Block

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Top or Bottom Boot Locations

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"28F200Axy Offers a User-Defined 8-Bit Byte or 16-Bit Word Organization

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"28F002Axy Offers Only the 8-Bit Byte Organization

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Maximum Access/Minimum Cycle Time

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Commercial and Extended

**5-V V****CC** ** **± ** 10% or 3.3-V V****CC** ** **± ** 0.3 V

** **5 V** ** ** **3.3 V** **

"28F002Axy/200Axy60 60 ns 110 ns

"28F002Axy/200Axy70 70 ns 130 ns

"28F002Axy/200Axy80 80 ns 150 ns

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Automotive

** 5-V V****CC** ** **± ** 10%

"28F200Axy70 70 ns

"28F200Axy80 80 ns

"28F200Axy90 90 ns

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x=S, E, F, Z, or M Depending on V

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*CC**/V**PP** Voltage Configuration

y=T for Top or B for Bottom Boot-Block Configuration

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100000- and 10000-Program/Erase-Cycle Versions

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Three Temperature Ranges

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Commercial...0°C to 70°C

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Extended...- 40°C to 85°C

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Automotive...- 40°C to 125°C

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Industry Standard Packages Offered in

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40-pin Thin Small-Outline Package TSOP

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44-pin Plastic Small-Outline Package PSOP

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48-pin TSOP

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Low Power Dissipation V**CC** = 5.5 V

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Active Read...330 mW Byte-Read

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Active Write...248 mW Byte-Write

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Active Read...330 mW Word-Read

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Active Write...248 mW Word-Write

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Block-Erase...165 mW

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Standby...0.72 mW CMOS-Input Levels

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Fully Automated On-Chip Erase and Word/Byte Program Operations

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Write-Protection for Boot Block

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Industry Standard Command-State Machine CSM

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Erase Suspend/Resume

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Algorithm-Selection Identifier

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Five Different Combinations of Supply Voltages Offered

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All Inputs/Outputs TTL-Compatible