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MGB15N40CLT4

点火IGBT 15安培, 410伏 Ignition IGBT 15 Amps, 410 Volts

Ignition IGBT 15 Amps, 410 Volts

N−Channel TO−220 and D2PAK

This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features

• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition System Applications

• High Pulsed Current Capability up to 50 A

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• Optional Gate Resistor RG

• Pb−Free Package is Available

MGB15N40CLT4 PDF数据文档
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MGB15N40CLT4 ON Semiconductor 安森美
MGB15N35CLT4 ON Semiconductor 安森美