BUK765R0-100E

NXP  BUK765R0-100E  晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3 V

The is a 100V standard level N-channel MOSFET uses TrenchMOS technology. Suitable for thermal demanding environments, transmission control, motor, lamps, solenoid controls and ultra high performance power switching applications.

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175°C Junction temperature

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AEC-Q101 qualified

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Repetitive avalanche rated

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True standard level gate with VGS th rating of >1V at 175°C