2N5191

中功率NPN硅晶体管 MEDIUM POWER NPN SILICON TRANSISTORS

- 双极 BJT - 单

得捷:
TRANS NPN 60V 4A SOT32-3

贸泽:
Bipolar Transistors - BJT NPN Power Switching

艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, STMicroelectronics&s; NPN 2N5191 general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 60V 4A 3-Pin3+Tab SOT-32 Tube

富昌:
2N5191 系列 60 V 4 A 通孔 NPN功率晶体管 - SOT-32

Chip1Stop:
Trans GP BJT NPN 60V 4A 3-Pin3+Tab SOT-32 Tube

Verical:
Trans GP BJT NPN 60V 4A 3-Pin3+Tab SOT-32 Tube

Newark:
# STMICROELECTRONICS  2N5191  Bipolar BJT Single Transistor, General Purpose, NPN, 60 V, 40 W, 4 A, 25 hFE