DMMT5551S-7-F

Trans GP BJT NPN 160V 0.2A 300mW Automotive 6Pin SOT-26 T/R

- 双极 BJT - 阵列 2 NPN（双）配对 160V 200mA 300MHz 300mW 表面贴装型 SOT-26

得捷:
TRANS 2NPN 160V 0.2A SOT26

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DMMT5551S-7-F GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 160V 0.2A 6-Pin SOT-26 T/R

Chip1Stop:
Trans GP BJT NPN 160V 0.2A 6-Pin SOT-26 T/R

Win Source:
TRANS 2NPN 160V 0.2A SOT26