IXFH20N80Q
IXYS SEMICONDUCTOR IXFH20N80Q 功率场效应管, MOSFET, N沟道, 20 A, 800 V, 420 mohm, 10 V, 4.5 V
The is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
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- Low RDS ON and QG
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- Avalanche energy and current rated
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- UL94V-0 Flammability rating
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- High dV/dt and low Qg
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- Easy to mount
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- Space savings
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- High power density